The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jan. 14, 2016
Tokyo Electron Limited, Tokyo, JP;
Hikaru Watanabe, Miyagi, JP;
Akihiro Tsuji, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. The target object includes the second region, the first region and a mask. The etching method includes a first sequence and a second sequence. Each of sequence includes, a first step of generating a plasma of a processing gas containing a fluorocarbon gas in a processing chamber where the target object is accommodated and forming a deposit containing fluorocarbon on the target object, and a second step of etching the first region by radicals of fluorocarbon contained in the deposit. The first sequence is performed during a period including time when the second region is exposed, and an etching amount of the first region in the first sequence is smaller than an etching amount of the first region in the second sequence.