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For the Inventor, By the Inventor

Wernberg, Austria

Martin Mischitz

This inventor holds 22 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag, Technische Universitaet Graz. Active years: 2014-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin Mischitz. Retrieved from https://idiyas.com/inventor/martin-mischitz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 72.7

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 42(Granted Patents)


Company Filing History:

goldMedal20 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal2 out of 2,211 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal2 out of 7 
 
Technische Universitaet Graz
 patents
4. 1 out of 21 
 
Technische Universitat Graz
 patents
where one patent can have more than one assignee

Years Active: 2014-2022

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Areas of Expertise:
Multi-Chip Device
Semiconductor Device
Porous Metal Layer
Integrated Circuit
Layer Structure
Metallization Layer
Inkjet Process
Substrate Processing
Copper Layer
Electronic Device
Sintered Metal Layer
Carrier System
22 patents (USPTO):Explore Patents
1. 11488921 - Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect (2022-11-01),
2. 11329021 - Method for fabricating a semiconductor device comprising a paste layer and semiconductor device (2022-05-10),
3. 10580753 - Method for manufacturing semiconductor devices (2020-03-03),
4. 10515910 - Semiconductor device having a porous metal layer and an electronic device having the same (2019-12-24),
5. 10373868 - Method of processing a porous conductive structure in connection to an electronic component on a substrate (2019-08-06),
6. 10340197 - Integrated circuit substrate having configurable circuit elements (2019-07-02),
7. 10269635 - Integrated circuit substrate and method for manufacturing the same (2019-04-23),
8. 9929111 - Method of manufacturing a layer structure having partially sealed pores (2018-03-27),
9. 9911686 - Source down semiconductor devices and methods of formation thereof (2018-03-06),
10. 9899277 - Integrated circuit substrate and method for manufacturing the same (2018-02-20),
11. 9844134 - Device including a metallization layer and method of manufacturing a device (2017-12-12),
12. 9818602 - Method of depositing a resin material on a semiconductor body with an inkjet process (2017-11-14),
13. 9793119 - Method for structuring a substrate using a protection layer as a mask (2017-10-17),
14. 9786568 - Method of manufacturing an integrated circuit substrate (2017-10-10),
15. 9768023 - Method for structuring a substrate (2017-09-19),

Title: The Innovative Journey of Martin Mischitz

Introduction: Martin Mischitz, a talented inventor hailing from Wernberg, Austria, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Martin Mischitz's latest patents include cutting-edge solutions in the fields of renewable energy, sustainable agriculture, and advanced robotics.

Career Highlights: With a career spanning over two decades, Martin Mischitz has established himself as a visionary inventor with a keen eye for identifying and solving complex technological challenges. His work has been recognized globally for its impact and ingenuity.

Collaborations: Throughout his career, Martin Mischitz has collaborated with leading research institutions, universities, and innovative companies to bring his ideas to life. His collaborative spirit and passion for innovation have led to the development of revolutionary technologies.

Conclusion: Martin Mischitz's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field of inventions. His work continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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