The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Feb. 19, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Claudia Sgiarovello, Villach, AT;
Martin Mischitz, Wernberg, AT;
Andrew Wood, St. Jakob im Rosental, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76892 (2013.01); H01L 21/32134 (2013.01); H01L 21/6715 (2013.01); H01L 21/67075 (2013.01); H01L 22/20 (2013.01); H01L 22/22 (2013.01); H01L 23/525 (2013.01); H01L 23/5252 (2013.01); H01L 22/14 (2013.01);
Abstract
A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. Based on a test result, a liquid is provided on a selected portion of the wafer to selectively alter at least one circuit element within the at least one of the plurality of semiconductor device structures.