The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Mar. 17, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Martin Mischitz, Wernberg, AT;

Markus Heinrici, Villach, AT;

Barbara Eichinger, Vienna, AT;

Manfred Schneegans, Vaterstaetten, DE;

Stefan Krivec, Arnoldstein, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/02203 (2013.01); H01L 21/02513 (2013.01); H01L 21/76259 (2013.01); H01L 23/53238 (2013.01); H01L 2224/0331 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/03505 (2013.01); H01L 2224/03602 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05551 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.


Find Patent Forward Citations

Loading…