The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jul. 21, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Martin Mischitz, Wernberg, AT;
Harald Huber, Glanegg, AT;
Michael Knabl, Finkenstein, AT;
Claudia Sgiarovello, Villach, AT;
Caterina Travan, Villach, AT;
Andrew Wood, St. Jakob im Rosental, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/525 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/94 (2013.01); H01L 23/3171 (2013.01); H01L 23/525 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01);
Abstract
According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.