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For the Inventor, By the Inventor

Nashua, NH, United States of America

Martin D Tabat

This inventor holds 17 USPTO granted patents and 4 published patent applications, primarily in Gas Cluster Ion Beam Processing. Top assignees: Tel Epion Corporation, Epion Corporation, The Aerospace Corporation. Active years: 1997-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin D Tabat. Retrieved from https://idiyas.com/inventor/martin-d-tabat

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 88.2

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 228(Granted Patents)


Company Filing History:

goldMedal15 out of 84 
 
Tel Epion Corporation
 patents
silverMedal1 out of 31 
 
Epion Corporation
 patents
bronzeMedal1 out of 741 
 
The Aerospace Corporation
 patents

Years Active: 1997-2020

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Areas of Expertise:
Gas Cluster Ion Beam
Etching Process
Semiconductor Materials
Hydrogenated Diamond-Like Carbon
Substrate Irradiation
Particulate Contamination
Doped Regions
Ultra-Shallow Junctions
Directional Growth
Multiple Nozzle System
Patterning Techniques
Processing Equipment
17 patents (USPTO):Explore Patents
1. 10861674 - Compensated location specific processing apparatus and method (2020-12-08),
2. 10497540 - Compensated location specific processing apparatus and method (2019-12-03),
3. 9324567 - Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials (2016-04-26),
4. 8981322 - Multiple nozzle gas cluster ion beam system (2015-03-17),
5. 8557710 - Gas cluster ion beam etching process for metal-containing materials (2013-10-15),
6. 8513138 - Gas cluster ion beam etching process for Si-containing and Ge-containing materials (2013-08-20),
7. 8512586 - Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials (2013-08-20),
8. 8455060 - Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam (2013-06-04),
9. 8304033 - Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles (2012-11-06),
10. 8202435 - Method for selectively etching areas of a substrate using a gas cluster ion beam (2012-06-19),
11. 8097860 - Multiple nozzle gas cluster ion beam processing system and method of operating (2012-01-17),
12. 7905199 - Method and system for directional growth using a gas cluster ion beam (2011-03-15),
13. 7642531 - Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipment (2010-01-05),
14. 7410890 - Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation (2008-08-12),
15. 7259036 - Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products (2007-08-21),

Title: The Innovations of Martin D. Tabat: A Pioneer in Particle Beam Technology

Introduction

Martin D. Tabat, an accomplished inventor based in Nashua, NH, has made significant contributions to the field of particle beam technology. With a robust portfolio of 17 patents to his name, his innovations showcase his commitment to advancing scientific and industrial applications. His work is instrumental in enhancing the precision and efficiency of particle beam processing.

Latest Patents

Among his latest inventions is the "Compensated Location Specific Processing Apparatus and Method." This innovative apparatus consists of a vacuum chamber with a beam-line that forms a particle beam to treat workpieces. The system includes a scanner for translating the workpiece through the particle beam, ensuring precise processing. Additionally, the apparatus is equipped with a scanner control circuit that regulates the scanning properties and a beam control circuit that adapts the beam flux according to a duty cycle, allowing seamless transitions between multiple operational states.

Career Highlights

Throughout his career, Martin Tabat has held positions at notable companies, including Tel Epion Corporation and Epion Corporation. His work in these organizations has facilitated the development of advanced technologies that leverage particle beams for various applications, improving outcomes in fields such as materials processing and fabrication.

Collaborations

In his journey as an inventor, Martin D. Tabat has collaborated with talented professionals like Matthew C. Gwinn and Michael A. Graf. Their combined expertise has enriched his projects, fostering an environment of innovation and creativity, which has ultimately led to the successful realization of several patented technologies.

Conclusion

Martin D. Tabat exemplifies the spirit of innovation, driving advancements in particle beam technology. His patents not only reflect his technical skills but also highlight his dedication to improving industrial processes. As he continues to explore new avenues in his field, the impact of his work will undoubtedly resonate in the scientific community and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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