The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 01, 2011
Applicants:
Yan Shao, Andover, MA (US);
Martin D. Tabat, Nashua, NH (US);
Christopher K. Olsen, Peabody, MA (US);
Ruairidh Maccrimmon, Arlington, MA (US);
Inventors:
Yan Shao, Andover, MA (US);
Martin D. Tabat, Nashua, NH (US);
Christopher K. Olsen, Peabody, MA (US);
Ruairidh MacCrimmon, Arlington, MA (US);
Assignee:
TEL Epion Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.