The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Jun. 24, 2008
Applicants:
John J. Hautala, Beverly, MA (US);
Martin D. Tabat, Nashua, NH (US);
Inventors:
John J. Hautala, Beverly, MA (US);
Martin D. Tabat, Nashua, NH (US);
Assignee:
TEL Epion Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 27/02 (2006.01); C23C 14/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.