The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Apr. 23, 2009
Martin D. Tabat, Nashua, NH (US);
Matthew C. Gwinn, Winchendon, MA (US);
Robert K. Becker, Danvers, MA (US);
Avrum Freytsis, Salem, MA (US);
Michael Graf, Belmont, MA (US);
Martin D. Tabat, Nashua, NH (US);
Matthew C. Gwinn, Winchendon, MA (US);
Robert K. Becker, Danvers, MA (US);
Avrum Freytsis, Salem, MA (US);
Michael Graf, Belmont, MA (US);
TEL Epion Inc., Billerica, MA (US);
Abstract
Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiOSTI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.