The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Feb. 14, 2005
John O. Borland, South Hamilton, MA (US);
John J. Hautala, Beverly, MA (US);
Wesley J. Skinner, Andover, MA (US);
Martin D. Tabat, Nashua, NH (US);
John O. Borland, South Hamilton, MA (US);
John J. Hautala, Beverly, MA (US);
Wesley J. Skinner, Andover, MA (US);
Martin D. Tabat, Nashua, NH (US);
TEL Epion Inc., Billerica, MA (US);
Abstract
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.