Company Filing History:
Years Active: 1996-2008
Title: The Innovations of John O Borland
Introduction
John O Borland is a notable inventor based in South Hamilton, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced methods for forming doped regions and ultra-shallow junctions in semiconductor materials.
Latest Patents
Among his latest patents are two key innovations: "Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation" and "Formation of ultra-shallow junctions by gas-cluster ion irradiation." Both patents detail methods of forming one or more doped regions in a semiconductor substrate and the semiconductor junctions formed thereby, utilizing gas cluster ion beams.
Career Highlights
Throughout his career, John O Borland has worked with several companies, including Tel Epion Corporation and Genus, Inc. His expertise in semiconductor technology has positioned him as a valuable asset in the industry.
Collaborations
John has collaborated with notable colleagues such as John J Hautala and Wesley J Skinner, contributing to advancements in semiconductor research and development.
Conclusion
John O Borland's innovative work in semiconductor technology and his numerous patents highlight his significant impact on the field. His contributions continue to influence advancements in the industry.