Tel Epion Corporation

Genus, Inc.

John O Borland

John J Hautala

Wesley J Skinner

Martin D Tabat

Sean R Kirkpatrick

Allen R Kirkpatrick

Thomas G Tetreault

Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products

CMOS vertically modulated wells are constructed by using a blanket implant to form a blanket buried layer and then using clustered MeV ion implantation to form a structure having a buried implanted layer for lateral isolation in addition to said blanket buried layer.

Method for cmos latch-up improvement by mev billi (buried implanted

CMOS vertically modulated wells have a structure with a buried implanted layer for lateral isolation (BILLI). This structure includes a field oxide area, a first retrograde well of a first conductivity type, a second retrograde well of a second conductivity type adjacent the first well, and a BILLI layer below the first well and connected to the second well by a vertical portion. This structure has a distribution in depth underneath the field oxide which kills lateral beta while preventing damage near the surface under the field oxide.

Semiconductor device having at least one field oxide area and CMOS

CMOS vertically modulated wells are constructed by using clustered MeV ion implantation to form a structure having a buried implanted layer for laterial isolation.

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South Hamilton, MA, United States of America

John O Borland