The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Mar. 11, 2005
Applicants:
John O. Borland, South Hamilton, MA (US);
John J. Hautala, Beverly, MA (US);
Wesley J. Skinner, Andover, MA (US);
Inventors:
John O. Borland, South Hamilton, MA (US);
John J. Hautala, Beverly, MA (US);
Wesley J. Skinner, Andover, MA (US);
Assignee:
TEL Epion Inc., Billerica, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.