Mao-Ying Wang

Title: The Innovative Contributions of Mao-Ying Wang

Introduction

Mao-Ying Wang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has advanced the manufacturing processes and structures of semiconductors, showcasing his expertise and innovative spirit.

Latest Patents

Mao-Ying Wang's latest patents focus on methods of manufacturing semiconductor structures. One notable patent describes a process that includes forming a first oxide layer over a landing pad layer, followed by the creation of a middle patterned dielectric layer. The method continues with the sequential formation of a second oxide layer and a top dielectric layer over the middle patterned dielectric layer. A trench is then formed through these layers, allowing for the conformal formation of a bottom conductive layer within the trench. The process concludes with the removal of portions of the top dielectric layer and etching to eliminate the second and first oxide layers. This innovative approach enhances the efficiency and effectiveness of semiconductor manufacturing.

Career Highlights

Throughout his career, Mao-Ying Wang has worked with notable companies such as Nan Ya Technology Corporation and Nanya Technologies Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Mao-Ying Wang has collaborated with talented individuals in his field, including Yu-Ting Lin and Lai-Cheng Tien. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Mao-Ying Wang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods continue to shape the future of semiconductor manufacturing.