The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Jun. 25, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Mao-Ying Wang, New Taipei, TW;

Tse-Yao Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2023.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 27/10814 (2013.01); H01L 28/40 (2013.01); H01L 28/56 (2013.01); H01L 28/91 (2013.01);
Abstract

The present disclosure provides a capacitor, a semiconductor device, and a method for preparing a capacitor. The semiconductor device includes a plurality of memory cells, at least one of the memory cells including a capacitor. The capacitor includes a first electrode comprising titanium nitride and disposed on a substrate, a dielectric film disposed on the first electrode, a multilayer film disposed on the dielectric film, and a second electrode comprising titanium nitride and disposed on the multilayer film. The method for preparing the capacitor includes forming the first electrode comprising titanium nitride on the substrate, forming a dielectric film on the first electrode, forming the multilayer film on the dielectric film, and forming the second electrode comprising titanium nitride on the multilayer film.


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