The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Apr. 26, 2010
Ming-cheng Chang, Taipei County, TW;
Chih-hsiung Hung, Taipei County, TW;
Mao-ying Wang, Taipei County, TW;
Wei-hui Hsu, Taoyuan County, TW;
Ming-Cheng Chang, Taipei County, TW;
Chih-Hsiung Hung, Taipei County, TW;
Mao-Ying Wang, Taipei County, TW;
Wei-Hui Hsu, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.