The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Aug. 18, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Lai-Cheng Tien, New Taipei, TW;

Wei-Chuan Fang, New Taipei, TW;

Yu-Ting Lin, New Taipei, TW;

Mao-Ying Wang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01G 4/30 (2006.01); H01G 4/232 (2006.01); H01G 4/005 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01G 4/005 (2013.01); H01G 4/232 (2013.01); H01G 4/30 (2013.01);
Abstract

A capacitance structure includes a substrate, a plurality of rod capacitors and an oxide layer. The rod capacitors are located on a top surface of the substrate and form a capacitor array. The oxide layer covers a top and a side of the capacitor array and a portion of the substrate. The rod capacitors extend along a first direction perpendicular to a second direction in which the top surface of the substrate extends. The oxide layer extends from the top of the capacitor array to the substrate along a third direction, and an angle is formed between the first and third directions.


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