The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Jun. 02, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Mao-Ying Wang, New Taipei, TW;
Yu-Ting Lin, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10852 (2013.01); H01L 27/10808 (2013.01); H01L 28/91 (2013.01);
Abstract
The present disclosure provides a method for fabricating DRAM devices with cylinder-type stacked capacitors. By utilizing offsetting of a first lattice pattern on a second silicon nitride layer (i.e., a middle silicon nitride layer) and a second lattice pattern on a third silicon nitride layer (i.e., a top silicon nitride layer), a collapse or deformation phenomenon of bottom electrodes of stacked capacitors can be reduced or eliminated. The wobbling phenomenon of bottom electrodes of stacked capacitors can be significantly reduced.