The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Jun. 22, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Lai-Cheng Tien, New Taipei, TW;

Wei-Chuan Fang, New Taipei, TW;

Yu-Ting Lin, New Taipei, TW;

Mao-Ying Wang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01G 4/30 (2006.01); H01G 4/232 (2006.01); H01G 4/005 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01G 4/005 (2013.01); H01G 4/232 (2013.01); H01G 4/30 (2013.01);
Abstract

A method of capacitance structure manufacturing includes following operations. A plurality of insulating tubes is formed over a substrate and perpendicular to the substrate. A first supporting layer and a second supporting layer above the first supporting layer are formed and connect the insulating tubes. The first supporting layer protrudes from the second supporting layer. Conductive material is filled in the insulating tubes to form rod capacitors forming a capacitor array and the capacitor array is covered by an oxide layer from its top to the substrate. The oxide layer is formed along the first supporting layer and the second supporting layer such that the oxide layer extends along a direction having an angle with respect to the substrate.


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