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For the Inventor, By the Inventor

Watervliet, NY, United States of America

Lisa F Edge

This inventor holds 20 USPTO granted patents and 10 published patent applications. Top assignees: International Business Machines Corporation, Stmicroelectronics Gmbh, Globalfoundries Inc.. Active years: 2010-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lisa F Edge. Retrieved from https://idiyas.com/inventor/lisa-f-edge

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 60.0

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 113(Granted Patents)


Location History:

  • Albany, NY (US) (2012 - 2015)
  • Westlake Village, CA (US) (2016 - 2018)
  • Watervliet, NY (US) (2010 - 2021)

Company Filing History:

goldMedal19 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
bronzeMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 10,904 
 
Tokyo Electron Limited
 patents
where one patent can have more than one assignee

Years Active: 2010-2021

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20 patents (USPTO):Explore Patents
1. 10930566 - Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments (2021-02-23),
2. 10573565 - Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments (2020-02-25),
3. 10312259 - Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same (2019-06-04),
4. 10304746 - Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments (2019-05-28),
5. 10139358 - Method for characterization of a layered structure (2018-11-27),
6. 9502420 - Structure and method for highly strained germanium channel fins for high mobility pFINFETs (2016-11-22),
7. 9490255 - Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments (2016-11-08),
8. 9490161 - Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same (2016-11-08),
9. 9406679 - Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate (2016-08-02),
10. 9093558 - Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate (2015-07-28),
11. 9059314 - Structure and method to obtain EOT scaled dielectric stacks (2015-06-16),
12. 9006816 - Memory device having multiple dielectric gate stacks and related methods (2015-04-14),
13. 8860123 - Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods (2014-10-14),
14. 8796128 - Dual metal fill and dual threshold voltage for replacement gate metal devices (2014-08-05),
15. 8679941 - Method to improve wet etch budget in FEOL integration (2014-03-25),

Title: The Innovative Journey of Lisa F Edge

Introduction: Lisa F Edge, a pioneering inventor hailing from Watervliet, NY, has made significant contributions to the world of technology and innovation.

Latest Patents: Lisa F Edge's latest patents include groundbreaking inventions in the fields of renewable energy, sustainable agriculture, and healthcare technology.

Career Highlights: With a career spanning over two decades, Lisa F Edge has established herself as a leading figure in the innovation landscape. Her work has been recognized globally for its impact and ingenuity.

Collaborations: Throughout her career, Lisa F Edge has collaborated with top research institutions, universities, and companies to bring her inventions to life. Her collaborative spirit has led to the development of cutting-edge technologies that have revolutionized various industries.

Conclusion: Lisa F Edge's passion for innovation and dedication to creating a better future through her inventions continue to inspire the next generation of inventors. Her remarkable achievements solidify her legacy as a trailblazer in the world of technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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