The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8796128 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 05, 2014

Filed:

Feb. 07, 2012
Applicants:

Lisa F. Edge, Albany, NY (US);

Nathaniel Berliner, Albany, NY (US);

James John Demarest, Albany, NY (US);

Balasubramanian S. Haran, Albany, NY (US);

Raymond J. Donohue, Selkirk, NY (US);

Inventors:

Lisa F. Edge, Albany, NY (US);

Nathaniel Berliner, Albany, NY (US);

James John Demarest, Albany, NY (US);

Balasubramanian S. Haran, Albany, NY (US);

Raymond J. Donohue, Selkirk, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors.


Find Patent Forward Citations

Edge, Lisa. (2014). Dual metal fill and dual threshold voltage for replacement gate metal devices (U.S. Patent No. 8796128). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8796128

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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