Company Filing History:

28 out of 40,635

Taiwan Semiconductor Manufacturing Comp. Ltd.

where one patent can have more than one assignee

Years Active: 2010-2020

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28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10872972 - Vertical tunnel field effect transistor (FET) (2020-12-22),

2. 10475907 - Vertical tunnel field effect transistor (FET) (2019-11-12),

3. 10164024 - Heterostructures for semiconductor devices and methods of forming the same (2018-12-25),

4. 10050111 - Semiconductor device channel system and method (2018-08-14),

5. 10014395 - Fin tunnel field effect transistor (FET) (2018-07-03),

6. 9887272 - Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer (2018-02-06),

7. 9735239 - Semiconductor device channel system and method (2017-08-15),

8. 9711632 - Intra-band tunnel FET (2017-07-18),

9. 9647097 - Vertical tunnel field effect transistor (FET) (2017-05-09),

10. 9614049 - Fin tunnel field effect transistor (FET) (2017-04-04),

11. 9419114 - Tunnel field-effect transistor (2016-08-16),

12. 9412871 - FinFET with channel backside passivation layer device and method (2016-08-09),

13. 9385198 - Heterostructures for semiconductor devices and methods of forming the same (2016-07-05),

14. 9368353 - Multiple-threshold voltage devices and method of forming same (2016-06-14),

15. 9337109 - Multi-threshold voltage FETs (2016-05-10),

Title: Innovations by Krishna Kumar Bhuwalka: A Leader in Semiconductor Technology

Introduction

Krishna Kumar Bhuwalka is an inventive force located in Asansol, India, known for his substantial contributions to the field of semiconductor technology. With an impressive portfolio of 28 patents, Bhuwalka has established himself as a notable inventor in the industry, particularly in the development of advanced transistor technologies.

Latest Patents

One of Bhuwalka's landmark innovations is the vertical tunnel field effect transistor (FET). This invention encompasses techniques for forming a vertical tunnel FET, which enhances tunneling efficiency. The process involves building a core over a first type substrate region, creating a second type channel shell with a greater circumference than the core, and adding gate dielectric and gate electrode structures. This configuration allows for effective line tunneling, thus optimizing performance in semiconductor applications.

Career Highlights

Throughout his career, Bhuwalka has been associated with leading companies in the semiconductor field, including Taiwan Semiconductor Manufacturing Company Ltd. and Imec Vzw. His work in these organizations has further cemented his reputation as an innovative engineer and inventor.

Collaborations

Bhuwalka has had the pleasure of collaborating with talented professionals such as Gerben Doornbos and Matthias Passlack. These partnerships have played a crucial role in shaping his inventive endeavors, allowing for the sharing of ideas and expertise within the semiconductor community.

Conclusion

Krishna Kumar Bhuwalka's contributions to semiconductor technology, particularly through his innovative patents, highlight his significant impact on the field. As he continues to develop cutting-edge solutions, the industry eagerly anticipates his future inventions that may lead to even greater technological advancements.

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