The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Jun. 20, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Krishna Bhuwalka, Leuven, BE;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A fin tunnel field effect transistor includes a seed region and a first type region disposed above the seed region. The first type region includes a first doping. The fin tunnel field effect transistor includes a second type region disposed above the first type region. The second type region includes a second doping that is opposite the first doping. The fin tunnel field effect transistor includes a gate insulator disposed above the second type region and a gate electrode disposed above the gate insulator. A method for forming an example fin tunnel field effect transistor is provided.