The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jun. 10, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Krishna Kumar Bhuwalka, Leuven, BE;
Martin Christopher Holland, Bertem, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method comprises growing a channel layer comprising a first channel region and a second channel region, depositing a first hard mask layer over the channel layer, patterning the first hard mask layer, applying a first delta doping process to the first channel region to form a first delta doping layer over the first channel region, depositing a first cap layer over the first delta doping layer, depositing a second hard mask layer over the channel layer, wherein the first cap layer is embedded in the second hard mask layer, patterning the second hard mask layer and the first hard mask layer to expose the second channel region, applying a second delta doping process to the second channel region to form a second delta doping layer over the second channel region and applying a first diffusion process to the first delta doping layer and the second delta doping layer.