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For the Inventor, By the Inventor

Tokyo, Japan

Kenichi Koyanagi

This inventor holds 21 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignees: Elpida Memory, Inc., Intermolecular, Inc., Nec Corporation. Active years: 1999-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichi Koyanagi. Retrieved from https://idiyas.com/inventor/kenichi-koyanagi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 52.4

Average Co-Inventor Count = 2.3

ph-index = 6

Forward Citations = 155(Granted Patents)


Location History:

  • Tokyo, JP (1999 - 2010)
  • Higashihiroshima, JP (2013 - 2015)

Company Filing History:

goldMedal13 out of 1,458 
 
Elpida Memory, Inc.
 patents
silverMedal6 out of 726 
 
Intermolecular, Inc.
 patents
bronzeMedal6 out of 36,684 
 
Nec Corporation
 patents
4. 1 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
5. 1 out of 42,731 
 
Hitachi, Ltd.
 patents
6. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2015

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Areas of Expertise:
ZrO2 Dielectric
DRAM Capacitors
High-K Materials
MIM Capacitors
ALD Process
Chemical Vapor Deposition
Semiconductor Devices
Dielectric Films
Trench Isolation
Heat Treatment
Memory Cells
Interconnection Structures
21 patents (USPTO):Explore Patents
1. 9178006 - Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications (2015-11-03),
2. 8574998 - Leakage reduction in DRAM MIM capacitors (2013-11-05),
3. 8546236 - High performance dielectric stack for DRAM capacitor (2013-10-01),
4. 8541283 - High performance dielectric stack for DRAM capacitor (2013-09-24),
5. 8476141 - High performance dielectric stack for DRAM capacitor (2013-07-02),
6. 8415227 - High performance dielectric stack for DRAM capacitor (2013-04-09),
7. 7771535 - Semiconductor manufacturing apparatus (2010-08-10),
8. 7763500 - Method for manufacturing semiconductor storage device comprising a slow cooling step (2010-07-27),
9. 7741173 - Method for forming a metal oxide film (2010-06-22),
10. 7576016 - Process for manufacturing semiconductor device (2009-08-18),
11. 7303973 - ALD process for capacitor dielectric (2007-12-04),
12. 7256144 - Method for forming a metal oxide film (2007-08-14),
13. 7224016 - Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film (2007-05-29),
14. 6939760 - Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film (2005-09-06),
15. 6509200 - Method of appraising a dielectric film, method of calibrating temperature of a heat treatment device, and method of fabricating a semiconductor memory device (2003-01-21),

Title: Kenichi Koyanagi: Pioneering Inventor from Tokyo

Introduction: Kenichi Koyanagi is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kenichi Koyanagi holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Kenichi Koyanagi has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Kenichi Koyanagi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Kenichi Koyanagi's relentless pursuit of innovation and his passion for creating technology that positively impacts society solidify his position as a trailblazing inventor in the vibrant tech landscape of Tokyo, Japan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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