The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Feb. 27, 2002
Kenichi Koyanagi, Tokyo, JP;
Other;
Abstract
When tantalum pentoxide film that is deposited on silicon wafer is subjected to a heat treatment in an oxygen atmosphere to improve crystallinity, refractive index is measured by an ellipsometer to appraise change in the crystallinity or change in the relative dielectric constant of the dielectric film and judge the adequacy of the heat treatment temperature. In particular, when the dielectric film is a structure that includes tantalum pentoxide film in which crystallinity is changed by heat treatment and silicon oxide film in which film thickness is changed by heat treatment, the temperature of the heat treatment can be accurately appraised by taking advantage of the correlation between the temperatures of the heat treatment and the refractive indices of the laminated films, this correlation having a curve with a maximum point and a minimum point.