The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Aug. 03, 2006
Takashi Arao, Tokyo, JP;
Kenichi Koyanagi, Tokyo, JP;
Kenji Komeda, Tokyo, JP;
Naruhiko Nakanishi, Tokyo, JP;
Hideki Gomi, Tokyo, JP;
Takashi Arao, Tokyo, JP;
Kenichi Koyanagi, Tokyo, JP;
Kenji Komeda, Tokyo, JP;
Naruhiko Nakanishi, Tokyo, JP;
Hideki Gomi, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (AlO) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.