Aloha, OR, United States of America

Kelin J Kuhn

This inventor holds 87 USPTO granted patents and 13 published patent applications and 7 EPO patents, primarily in Nanowire Technology (CPC class H01L29-0673). Top assignees: Intel Corporation, Sony Group Corporation, Google Inc.. Active years: 2002-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kelin J Kuhn. Retrieved from https://idiyas.com/inventor/kelin-j-kuhn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 72.4

 

Average Co-Inventor Count = 5.2

ph-index = 13

Forward Citations = 825(Granted Patents)

Forward Citations (Not Self Cited) = 781(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Alohoa, OR (US) (2016 - 2017)
  • Aloha, OR (US) (2002 - 2024)

Company Filing History:


Years Active: 2002-2025

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Areas of Expertise:
Nanowire Transistors
CMOS FinFETs
Silicon Germanium
Thermoelectric Cooling
Hybrid Geometry
Mechanical Switching
Tunneling Field Effect Transistors
Integrated Devices
Internal Spacers
Dielectric Nanostructures
Magnetic Nanomechanical Devices
Low Band Gap Structures
87 patents (USPTO):Explore Patents

Title: Kelin J Kuhn: Pioneering Innovations in Nanowire Technology

Introduction:

In the realm of inventors, Kelin J Kuhn stands out as a trailblazer whose dedication to innovation has propelled him to the forefront of technological advancement. Hailing from Aloha, OR (US), Kuhn's insatiable appetite for excellence has resulted in the acquisition of an impressive 82 patents, showcasing his ingenuity and commitment to pushing the boundaries of what is possible in the field of nanowire devices.

Latest Patents:

Kuhn's recent patents exemplify his expertise and forward-thinking approach to technology. His groundbreaking work on integration methods to fabricate internal spacers for nanowire devices has revolutionized the industry. By developing innovative techniques for forming internal spacers within nanowire stacks, Kuhn has introduced a new level of precision and efficiency to semiconductor device fabrication processes. Additionally, his advancements in nanowire transistor fabrication with hardmask layers have significantly enhanced the durability and reliability of multi-stacked nanowire transistors, solidifying his reputation as a pioneer in the field.

Career Highlights:

Throughout his illustrious career, Kuhn has made significant contributions to some of the industry's leading companies, including Intel Corporation and Sony Group Corporation. By collaborating with top-tier organizations, Kuhn has not only expanded his own knowledge and expertise but has also shared his groundbreaking innovations with a wider audience, further cementing his status as a visionary inventor.

Collaborations:

Collaboration has been a cornerstone of Kuhn's success, with key partnerships such as those with Seiyon Kim and Rafael Rios playing a crucial role in the development and implementation of his revolutionary ideas. Through teamwork and shared expertise, Kuhn has been able to leverage the collective intelligence of his colleagues to drive innovation and achieve unparalleled results in the field of nanowire technology.

Conclusion:

Kelin J Kuhn's remarkable journey as an inventor is a testament to the power of passion, perseverance, and collaboration in pushing the boundaries of innovation. His relentless pursuit of excellence and unwavering commitment to advancing technology have established him as a prominent figure in the world of inventors, inspiring future generations to strive for greatness in the ever-evolving landscape of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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