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For the Inventor, By the Inventor

Portland, OR, United States of America

Annalisa Cappellani

USPTO Granted Patents = 51 

 

Average Co-Inventor Count = 5.1

ph-index = 13

Forward Citations = 704(Granted Patents)

Forward Citations (Not Self Cited) = 680(Dec 10, 2025)


Company Filing History:

goldMedal44 out of 54,780 
 
Intel Corporation
 patents
silverMedal3 out of 14,738 
 
Infineon Technologies Ag
 patents
bronzeMedal2 out of 32,543 
 
Google Inc.
 patents
4. 1 out of 3,475 
 
Sony Group Corporation
 patents
5. 1 out of 58,131 
 
Sony Corporation
 patents

Years Active: 2004-2025

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Areas of Expertise:
Nanowire Structures
Gate-All-Around Transistors
Silicon Germanium Nanowires
CMOS Nanowire Structure
Three-Dimensional Semiconductor Devices
Strained Gate-All-Around Devices
Junctionless Accumulation-Mode Devices
High-K Dielectric Layer
Multi-Gate Semiconductor Devices
Metallic Source and Drain Regions
Isolated Body Semiconductor Devices
Strain-Inducing Buffers
51 patents (USPTO):Explore Patents
1. 12278144 - Gate contact structure over active gate and method to fabricate same (2025-04-14),
2. 12142634 - Silicon and silicon germanium nanowire structures (2024-11-12),
3. 12125916 - Nanowire structures having non-discrete source and drain regions (2024-10-22),
4. 11552197 - Nanowire structures having non-discrete source and drain regions (2023-01-10),
5. 11004739 - Gate contact structure over active gate and method to fabricate same (2021-05-11),
6. 10991799 - Silicon and silicon germanium nanowire structures (2021-04-27),
7. 10847653 - Semiconductor device having metallic source and drain regions (2020-11-24),
8. 10847631 - Gate-all-around (GAA) transistors with nanowires on an isolation pedestal (2020-11-24),
9. 10636871 - Silicon and silicon germanium nanowire structures (2020-04-28),
10. 10580899 - Nanowire structures having non-discrete source and drain regions (2020-03-03),
11. 10424580 - Semiconductor devices having modulated nanowire counts (2019-09-24),
12. 10229981 - Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate (2019-03-12),
13. 10192783 - Gate contact structure over active gate and method to fabricate same (2019-01-29),
14. 10074573 - CMOS nanowire structure (2018-09-11),
15. 10026829 - Semiconductor device with isolated body portion (2018-07-17),

Title: Inventor Annalisa Cappellani: Revolutionizing Technology in Portland

Introduction: Annalisa Cappellani is a pioneering inventor based in Portland, Oregon, known for her groundbreaking contributions to the field of technology. With a passion for innovation and a keen eye for detail, she has made significant strides in various technological advancements.

Latest Patents: Annalisa Cappellani's latest patents focus on artificial intelligence integration in everyday devices, enhancing user experience and efficiency. Her inventions have garnered attention for their forward-thinking approach and practical applications in modern society.

Career Highlights: Throughout her illustrious career, Annalisa Cappellani has received numerous accolades for her innovative work. Her dedication to pushing the boundaries of technology has led to the development of cutting-edge solutions that have transformed industries.

Collaborations: Annalisa Cappellani has collaborated with leading tech companies and research institutions to further her inventions. Her ability to work seamlessly in interdisciplinary teams has resulted in the successful implementation of her ideas into real-world products.

Conclusion: In conclusion, Annalisa Cappellani stands as a trailblazing inventor whose work continues to shape the technological landscape in Portland and beyond. Her relentless pursuit of innovation and commitment to excellence make her a driving force in the world of technology.

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