The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Feb. 16, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Annalisa Cappellani, Portland, OR (US);

Stephen M. Cea, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Harry Gomez, Hillsboro, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Patrick H. Keys, Portland, OR (US);

Seiyon Kim, Portland, OR (US);

Kelin J. Kuhn, Aloha, OR (US);

Aaron D. Lilak, Beaverton, OR (US);

Rafael Rios, Portland, OR (US);

Mayank Sahni, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 27/12 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); B82Y 10/00 (2013.01); H01L 21/762 (2013.01); H01L 21/76216 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.


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