Portland, OR, United States of America

Seiyon Kim

This inventor holds 80 USPTO granted patents and 6 published patent applications and 7 EPO patents, primarily in Nanowire Transistors (CPC class H01L29-0673). Top assignees: Intel Corporation, Sony Group Corporation, Google Inc.. Active years: 2009-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seiyon Kim. Retrieved from https://idiyas.com/inventor/seiyon-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 80 

% Patents Active = 90.0

 

Average Co-Inventor Count = 5.5

ph-index = 12

Forward Citations = 549(Granted Patents)

Forward Citations (Not Self Cited) = 512(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:


Years Active: 2009-2025

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Areas of Expertise:
Nanowire Fabrication
Ferroelectric Transistors
Silicon Germanium Structures
Memory Devices
Vertical Integration
Field Effect Transistors
Multi-Metal-Level Interconnect
Embedded DRAM
Non-Planar Devices
Thermoelectric Cooling
Doped Source Drain Contacts
Ultra Thin Fin Profiles
80 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Seiyon Kim's Contributions to Nanotechnology

Introduction

Seiyon Kim is a visionary inventor based in Portland, Oregon, who has made significant strides in the field of nanotechnology. With an impressive portfolio that includes 77 patents, Kim's work primarily focuses on advancing microelectronic structures, which are pivotal for modern semiconductor devices.

Latest Patents

Among Seiyon Kim’s latest patents are innovative techniques involving silicon and silicon germanium nanowire structures. One notable patent details methods of forming microelectronic structures, wherein a nanowire device incorporates a substrate with source/drain structures adjacent to spacers. This design features vertically stacked nanowire channel structures that optimize device functionality. Another significant patent describes nanowire structures characterized by non-discrete source and drain regions. This semiconductor device innovation highlights a configuration of multiple vertically stacked nanowires above a substrate, each featuring a discrete channel region enveloped by a gate electrode stack, complemented by adjoining non-discrete source and drain regions.

Career Highlights

Seiyon Kim has enjoyed a fruitful career, contributing his expertise to leading companies in the tech industry. Notably, he has held positions at Intel Corporation and Sony Group Corporation, where he furthered his research and innovation in semiconductor technologies. His deep understanding of nanostructures and microelectronics has allowed him to pioneer advancements that significantly impact the industry.

Collaborations

Throughout his career, Kim has collaborated with notable colleagues, including Kelin J. Kuhn and Rafael Rios. These partnerships highlight the collaborative nature of innovation, enabling Syiyon Kim to leverage diverse expertise to further his inventive pursuits.

Conclusion

Seiyon Kim's contributions to nanotechnology are exemplary of the innovative spirit that drives progress in the semiconductor industry. His extensive patent portfolio and fruitful collaborations underscore his role as a leading inventor, making strides that will shape the future of microelectronics. As technology continues to evolve, the impact of Kim's work will undoubtedly resonate throughout various applications in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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