The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Jun. 29, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Sasikanth Manipatruni, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Seiyon Kim, Portland, OR (US);
Ian Young, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 49/02 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/02197 (2013.01); H01L 21/28088 (2013.01); H01L 28/55 (2013.01); H01L 29/24 (2013.01); H01L 29/40111 (2019.08); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 29/66969 (2013.01); H01L 29/7851 (2013.01); H01L 29/7869 (2013.01); H01L 29/78391 (2014.09); H01L 29/0673 (2013.01);
Abstract
An integrated circuit structure comprises a substrate. An antiferroelectric gate oxide is above the substrate, the antiferroelectric gate oxide comprising a perovskite material. A gate electrode is over at least a portion of the gate oxide.