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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Harry Gomez

This inventor holds 14 USPTO granted patents and 4 published patent applications and 5 EPO patents. Top assignee: Intel Corporation. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harry Gomez. Retrieved from https://idiyas.com/inventor/harry-gomez

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 71.4

 

Average Co-Inventor Count = 5.0

ph-index = 6

Forward Citations = 215(Granted Patents)


Company Filing History:

goldMedal14 out of 56,322 
 
Intel Corporation
 patents

Years Active: 2010-2025

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14 patents (USPTO):Explore Patents
1. 12278144 - Gate contact structure over active gate and method to fabricate same (2025-04-14),
2. 11004739 - Gate contact structure over active gate and method to fabricate same (2021-05-11),
3. 10847631 - Gate-all-around (GAA) transistors with nanowires on an isolation pedestal (2020-11-24),
4. 10229981 - Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate (2019-03-12),
5. 10192783 - Gate contact structure over active gate and method to fabricate same (2019-01-29),
6. 10026829 - Semiconductor device with isolated body portion (2018-07-17),
7. 9978636 - Isolated and bulk semiconductor devices formed on a same bulk substrate (2018-05-22),
8. 9608059 - Semiconductor device with isolated body portion (2017-03-28),
9. 9484272 - Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer (2016-11-01),
10. 9461143 - Gate contact structure over active gate and method to fabricate same (2016-10-04),
11. 9425212 - Isolated and bulk semiconductor devices formed on a same bulk substrate (2016-08-23),
12. 8735869 - Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates (2014-05-27),
13. 8313999 - Multi-gate semiconductor device with self-aligned epitaxial source and drain (2012-11-20),
14. 7732285 - Semiconductor device having self-aligned epitaxial source and drain extensions (2010-06-08),

Title: The Inventive Journey of Harry Gomez

Introduction: Harry Gomez, a talented inventor hailing from Hillsboro, Oregon, has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Harry Gomez's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: With a background in engineering and a passion for sustainable solutions, Harry Gomez has had a successful career marked by numerous awards for his innovative designs. He has worked for several leading tech companies, where he honed his skills and developed cutting-edge technologies.

Collaborations: Throughout his career, Harry Gomez has collaborated with top researchers and engineers in the industry to bring his ideas to life. His ability to work in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking inventions.

Conclusion: Harry Gomez's relentless pursuit of innovation and his commitment to creating a more sustainable future have solidified his position as a respected inventor in the field. His contributions continue to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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