Kanagawa, Japan

Keiichi Yui

USPTO Granted Patents = 13 

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Kanagawa, JP (2012 - 2015)
  • Yokohama, JP (2015 - 2019)

Company Filing History:


Years Active: 2012-2019

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13 patents (USPTO):Explore Patents

Title: Innovations of Keiichi Yui

Introduction

Keiichi Yui is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work primarily focuses on processes related to the formation of advanced semiconductor materials.

Latest Patents

One of his latest patents is a process of forming an epitaxial wafer. This process includes steps such as growing an aluminum nitride (AlN) layer at a specific temperature and ammonia flow rate, followed by the growth of a gallium nitride (GaN) layer on the AlN layer. The process is designed to optimize the conditions under which the GaN layer is formed, ensuring high-quality semiconductor materials. Another notable patent is for forming a High Electron Mobility Transistor (HEMT) made of nitride semiconductor materials. This process involves the sequential growth of a buffer layer, an n-type layer, and a channel layer using a metal organic chemical vapor deposition (MOCVD) technique.

Career Highlights

Keiichi Yui is currently employed at Sumitomo Electric Industries, Limited, where he continues to innovate in the semiconductor field. His expertise in the growth of nitride semiconductor materials has positioned him as a key figure in advancing technology in this area.

Collaborations

Throughout his career, Keiichi has collaborated with notable colleagues such as Ken Nakata and Isao Makabe. These collaborations have further enhanced the impact of his work in the semiconductor industry.

Conclusion

Keiichi Yui's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor materials and processes.

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