The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jul. 27, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Keiichi Yui, Yokohama, JP;
Ken Nakata, Yokohama, JP;
Tsuyoshi Kouchi, Yokohama, JP;
Isao Makabe, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02414 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 29/432 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer.