Company Filing History:
Years Active: 2015-2018
Title: Tsuyoshi Kouchi: Innovator in Semiconductor Technology
Introduction
Tsuyoshi Kouchi is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work primarily focuses on the development of high electron mobility transistors and semiconductor devices.
Latest Patents
One of his latest patents is titled "Process for forming a high electron mobility transistor." This patent discloses a method for creating a High Electron Mobility Transistor (HEMT) using nitride semiconductor materials. The process involves sequentially growing a buffer layer, an n-type layer doped with n-type dopants, and a channel layer through a metal organic chemical vapor deposition (MOCVD) technique. A key feature of this process is the supply of only an n-type dopant gas before the growth of the n-type layer, following the growth of the buffer layer.
Another notable patent is "Semiconductor device and method of manufacturing the same." This invention outlines a method for manufacturing a semiconductor device that includes forming a first layer of InAlN, a second layer of InAlGaN on the first layer at a higher growth temperature, and a third layer of GaN, AlGaN, or InGaN under similar conditions.
Career Highlights
Tsuyoshi Kouchi is currently employed at Sumitomo Electric Industries, Limited, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.
Collaborations
He has collaborated with notable coworkers, including Keiichi Yui and Ken Nakata, further enhancing the innovative efforts within his team.
Conclusion
Tsuyoshi Kouchi's work in semiconductor technology exemplifies the spirit of innovation. His patents and contributions continue to influence the field, showcasing his dedication to advancing technology.