The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Mar. 15, 2017
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Ken Nakata, Yokohama, JP;
Tsuyoshi Kouchi, Yokohama, JP;
Isao Makabe, Yokohama, JP;
Keiichi Yui, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 29/1075 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01);
Abstract
A process of forming a High Electron Mobility Transistor (HEMT) made of nitride semiconductor materials is disclosed. The process sequentially grows a buffer layer, a n-type layer doped with n-type dopants, and a channel layer by a metal organic chemical vapor deposition (MOCVD) technique. A feature of the process is to supply only an n-type dopant gas before the growth of the n-type layer but after the growth of the buffer layer.