The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 27, 2013
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Ken Nakata, Yokohama, JP;
Keiichi Yui, Yokohama, JP;
Hiroyuki Ichikawa, Yokohama, JP;
Tsuyoshi Kouchi, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract
A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer, The SiC substrate has an energy difference greater than 0.67 eV but less than 1.43 eV; the AlN layer has a thickness less than 50 nm; and the GaN layer has a thickness less than 1.5 μm.