The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 26, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Keiichi Yui, Yokohama, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A process of forming an epitaxial wafer is disclosed. The process includes steps of (a) growing an aluminum nitride (AlN) layer at a first temperature and a first flow rate of ammonia (NH); and (b) growing a gallium nitride (GaN) layer on the AlN layer. The step (b) includes a first period and a second period. At least one of a temperature from the first temperature to a second temperature that is lower than the first temperature and a flow rate of NHfrom the first flow rate to a second flow rate different from the first flow rate is carried out during the first period. The second period grows the GaN layer at the second temperature and the second flow rate of NH.