The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Jun. 29, 2011
Keiichi Yui, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Akira Furuya, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Akira Furuya, Kanagawa, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following:76500/53800/where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.