The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Jun. 29, 2011
Applicants:
Ken Nakata, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Inventors:
Ken Nakata, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.