The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jul. 29, 2011
Applicants:
Keiichi Yui, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Hiroyuki Ichikawa, Kanagawa, JP;
Inventors:
Keiichi Yui, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Hiroyuki Ichikawa, Kanagawa, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02647 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer.