The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Jul. 28, 2011
Applicants:
Ken Nakata, Kanagawa, JP;
Isao Makabe, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a first GaN layer provided on a SiC substrate, a second GaN layer provided on the first GaN layer, and an electron supply layer that is provided on the second GaN layer and has a band gap greater than that of GaN, the first GaN layer having an acceptor concentration higher than that of the second GaN layer.