The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jun. 29, 2011
Applicants:
Isao Makabe, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Inventors:
Isao Makabe, Kanagawa, JP;
Keiichi Yui, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Takamitsu Kitamura, Kanagawa, JP;
Assignee:
Sumitomo Electric Industrires, Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor substrate includes an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer.