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For the Inventor, By the Inventor

Yokohama, Japan

Katsuhiko Hoya

This inventor holds 46 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Infineon Technologies Ag. Active years: 2002-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuhiko Hoya. Retrieved from https://idiyas.com/inventor/katsuhiko-hoya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46

% Patents Active = 67.4

Average Co-Inventor Count = 1.8

ph-index = 5

Forward Citations = 139(Granted Patents)


Location History:

  • Kanagawa-ken, JP (2014)
  • Yokohama, JP (2002 - 2018)
  • Kanagawa, JP (2012 - 2019)
  • Yokohama Kanagawa, JP (2015 - 2021)

Company Filing History:

goldMedal33 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal11 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal1 out of 15,027 
 
Infineon Technologies Ag
 patents
4. 2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2021

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Areas of Expertise:
Semiconductor Storage
Memory Cell Arrays
Nonvolatile Memory
Magnetoresistive Memory
Power Consumption
Magnetic Tunnel Junction
Error Checking
Ferroelectric Memory
Data Readout
Timing Controller
ECC Circuit
Memory Device
46 patents (USPTO):Explore Patents
1. 11101319 - Semiconductor storage device including variable resistance elements (2021-08-24),
2. 10783946 - Semiconductor memory device including memory cell arrays (2020-09-22),
3. 10482990 - Memory device and memory system (2019-11-19),
4. RE47639 - Nonvolatile semiconductor storage device equipped with a comparison buffer for reducing power consumption during write (2019-10-07),
5. 10338835 - Memory device (2019-07-02),
6. 10102062 - Semiconductor storage device (2018-10-16),
7. 10049711 - Magnetoresistive memory device (2018-08-14),
8. 9947380 - Adjustable read reference voltage to reduce errors in memory devices (2018-04-17),
9. 9934834 - Magnetoresistive memory device (2018-04-03),
10. RE46702 - Semiconductor storage device comprising magnetic tunnel junction elements and write amplifiers (2018-02-05),
11. 9818467 - Semiconductor memory device (2017-11-14),
12. 9704918 - Semiconductor storage device (2017-07-11),
13. 9672887 - Semiconductor memory capable of reading data without accessing memory cell (2017-06-06),
14. 9646667 - Semiconductor memory device (2017-05-09),
15. 9626128 - Semiconductor memory device (2017-04-18),

Title: The Innovative Journey of Katsuhiko Hoya

Introduction:

Katsuhiko Hoya, a pioneering inventor hailing from Yokohama, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents:

Katsuhiko Hoya's recent patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and sustainable energy solutions.

Career Highlights:

With a career spanning over two decades, Katsuhiko Hoya has worked with leading tech companies in Japan, spearheading research and development projects that have led to the creation of cutting-edge products.

Collaborations:

Throughout his career, Katsuhiko Hoya has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge sharing to push the boundaries of technology further.

Conclusion:

In conclusion, Katsuhiko Hoya's relentless pursuit of innovation and his passion for creating solutions that positively impact society make him a true visionary in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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