The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 06, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Keisuke Nakatsuka, Seoul, KR;
Tadashi Miyakawa, Yokohama Kanagawa, JP;
Katsuhiko Hoya, Yokohama Kanagawa, JP;
Takeshi Hamamoto, Yokkaichi Mie, JP;
Hiroyuki Takenaka, Kamakura Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); G11C 5/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1695 (2013.01); G11C 5/025 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G11C 5/04 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract
According to one embodiment, a magnetoresistive memory device includes a substrate having a first surface which includes a first direction; and memory elements each having a switchable resistance. A first column of memory elements lined up along the first direction is different from an adjacent second column of memory elements lined up along the first direction at positions of memory elements in the first direction.