The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2018
Filed:
Jul. 07, 2015
Toshiba Memory Corporation, Tokyo, JP;
Katsuhiko Hoya, Yokohama, JP;
Kenji Tsuchida, Kawasaki, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory according to an embodiment includes bit lines, word lines, source lines, magnetic tunnel junction elements and transistors that are serially connected between the bit lines and the source lines, respectively, and a sense amplifier that detects data stored in the magnetic tunnel junction elements. The semiconductor storage device includes multiplexers between the bit lines and the sense amplifier in order to select one of the bit lines to be connected to the sense amplifier, and write amplifiers that are located corresponding to memory cell blocks each of which includes memory cells each including the magnetic tunnel junction element and the transistor and are connected to the bit lines or connected via the multiplexers to the bit lines. To write data, the sense amplifier applies a write voltage to the bit lines and then the write amplifiers hold the write voltage.