The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Feb. 19, 2016
Tadashi Miyakawa, Yokohama, JP;
Katsuhiko Hoya, Yokohama, JP;
Mariko Iizuka, Yokohama, JP;
Takashi Nakazawa, Seongnam-si, KR;
Hiroyuki Takenaka, Kamakura, JP;
Tadashi Miyakawa, Yokohama, JP;
Katsuhiko Hoya, Yokohama, JP;
Mariko Iizuka, Yokohama, JP;
Takashi Nakazawa, Seongnam-si, KR;
Hiroyuki Takenaka, Kamakura, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor storage device includes a cell array including resistance change elements formed above a semiconductor substrate; first cell transistors formed on the semiconductor substrate and provided in association with the resistance change elements; first gate electrodes included in the first cell transistor and extending in a first direction; a first bit lines electrically connected to the resistance change elements respectively and extending in a second direction perpendicular to the first direction; a second bit lines electrically connected to one end of a current path of the first cell transistors respectively and extending in the second direction; and first active areas in which the first cell transistors are formed, and which extend in a direction crossing the first direction at a first angle.