Jung-Yu Hsieh

This inventor holds 18 USPTO granted patents and 3 published patent applications, primarily in Non-Volatile Memory. Top assignee: Macronix International Co., Ltd.. Active years: 2003-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-Yu Hsieh. Retrieved from https://idiyas.com/inventor/jung-yu-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 18 (Patent Applications = 3)

% Patents Active = 77.8

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 371(Granted Patents)

Company Filing History:

18 out of 3,609

Macronix International Co., Ltd.

patents

Years Active: 2003-2013

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Areas of Expertise:

Nonvolatile Memory

Charge Trapping

Wafer Gettering

Dielectric Layers

Memory Cells

Semiconductor Fabrication

Polysilicon Insulation

Atomic Layer Deposition

Multilayer Structure

Low Hydrogen Concentration

Flash Memory

Chemical Mechanical Grinding

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8581322 - Nonvolatile memory device and method for making the same (2013-11-12),

2. 8183618 - Method for fabricating a charge trapping memory device (2012-05-22),

3. 8106483 - Wafer with improved intrinsic gettering ability (2012-01-31),

4. 8026136 - Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory (2011-09-27),

5. 8022466 - Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same (2011-09-20),

6. 8022465 - Low hydrogen concentration charge-trapping layer structures for non-volatile memory (2011-09-20),

7. 7939432 - Method of improving intrinsic gettering ability of wafer (2011-05-10),

8. 7863132 - Method for fabricating a charge trapping memory device (2011-01-04),

9. 7778072 - Method for fabricating charge-trapping memory (2010-08-17),

10. 7763935 - ONO formation of semiconductor memory device and method of fabricating the same (2010-07-27),

11. 7704865 - Methods of forming charge-trapping dielectric layers for semiconductor memory devices (2010-04-27),

12. 7521321 - Method of fabricating a non-volatile semiconductor memory device (2009-04-21),

13. 7450423 - Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure (2008-11-11),

14. 7118968 - Method for manufacturing interpoly dielectric (2006-10-10),

15. 6822284 - ONO dielectric for memory cells (2004-11-23),

Title: Jung-Yu Hsieh: Pioneering Inventor from Hsinchu

Introduction: Jung-Yu Hsieh is a distinguished inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jung-Yu Hsieh holds several patents in the areas of semiconductor technology, nanotechnology, and renewable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Jung-Yu Hsieh has worked with leading research institutions and technology companies, consistently pushing the boundaries of what is possible in the realm of invention.

Collaborations: Throughout his career, Jung-Yu Hsieh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous breakthroughs in the industry.

Conclusion: Jung-Yu Hsieh's passion for innovation, coupled with his relentless drive to solve complex technological challenges, has solidified his reputation as a visionary inventor in the global innovation landscape.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: