The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 30, 2007
Yen-hao Shih, Banqiao, TW;
Ming-hsiang Hsueh, Hsinchu, TW;
Erh-kun Lai, Longjing Shiang, TW;
Chia-wei Wu, Jhubei, TW;
Chi-pin LU, Hsinchu, TW;
Jung-yu Hsieh, Hsinchu, TW;
Yen-Hao Shih, Banqiao, TW;
Ming-Hsiang Hsueh, Hsinchu, TW;
Erh-Kun Lai, Longjing Shiang, TW;
Chia-Wei Wu, Jhubei, TW;
Chi-Pin Lu, Hsinchu, TW;
Jung-Yu Hsieh, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.